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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2007.05.25 Page No. : 1/5 BTC4061N3 Description * High breakdown voltage. * Low collector output capacitance. * Ideal for chroma circuit. * Pb-free package. Symbol BTC4061N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 300 300 6 500 225 150 -55~+150 Unit V V V mA mW C C BTC4061N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 90 100 40 50 Typ. 0.15 Max. 50 50 0.35 0.9 270 6 Unit V V V nA nA V V MHz pF Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2007.05.25 Page No. : 2/5 Test Conditions IC=100A IC=1mA IE=10A VCB=250V VEB=5V IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=20MHz VCB=20V, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification Of hFE 2 Rank Range P 100~180 Q 120~270 Ordering Information Device BTC4061N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 1D BTC4061N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2007.05.25 Page No. : 3/5 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) VCE(SAT) Current Gain---HFE IC=20IB 100 VCE=10V VCE=5V 100 IC=10IB 10 1 10 Collector Current ---IC(mA) 100 10 1 10 Collector Current--- IC(mA) 100 Saturation Voltage vs Collector Current 1000 Cutoff Frequency vs Collector Current 1 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) FT@VCE=30V VBE(SAT)@IC=10IB 100 1 10 Collector Current ---IC(mA) 100 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( ) BTC4061N3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2007.05.25 Page No. : 4/5 Carrier Tape Dimension BTC4061N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension A L Spec. No. : C209N3 Issued Date : 2002.05.11 Revised Date : 2007.05.25 Page No. : 5/5 Marking: 3 B 1 2 S 1D TE V G C D K 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector J H *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4061N3 CYStek Product Specification |
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